डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDD13AN06A0 | N-Channel MOSFET MOSFET – N-Channel, POWERTRENCH)
60 V, 50 A, 13 mW
FDD13AN06A0
Features
• RDS(on) = 11.5 mW (Typ.) @ VGS = 10 V, ID = 50 A • QG(tot) = 22 nC (Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Dio |
ON Semiconductor |
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FDD13AN06A0 | N-Channel PowerTrench MOSFET FDD13AN06A0 — N-Channel PowerTrench® MOSFET
November 2013
FDD13AN06A0
N-Channel PowerTrench® MOSFET
60 V, 50 A, 13 mΩ
Features
• RDS(on) = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A • QG(tot) = 22 n |
Fairchild Semiconductor |
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