FDD10AN06A0 डाटा शीट PDF( Datasheet )

MOSFET – N-Channel, POWERTRENCH) 60 V, 50 A, 10.5 mW FDD10AN06A0 Features • RDS(on) = 9.4 mW (Typ.), VGS = 10 V, ID = 50 A • Qg(tot) = 28 nC (Typ.), VGS = 10 V • Low Miller Charge • Low Qrr Body Diod

FDD10AN06A0 August 2002 FDD10AN06A0 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features • r DS(ON) = 9.4mΩ (Typ.), V GS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge �

FDD10AN06A0-F085 N-Channel PowerTrench® MOSFET FDD10AN06A0-F085 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10

FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10