डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDD10AN06A0 | N-Channel MOSFET MOSFET – N-Channel, POWERTRENCH)
60 V, 50 A, 10.5 mW
FDD10AN06A0
Features
• RDS(on) = 9.4 mW (Typ.), VGS = 10 V, ID = 50 A • Qg(tot) = 28 nC (Typ.), VGS = 10 V • Low Miller Charge • Low Qrr Body Diod |
ON Semiconductor |
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FDD10AN06A0 | N-Channel MOSFET FDD10AN06A0
August 2002
FDD10AN06A0
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
Features
• r DS(ON) = 9.4mΩ (Typ.), V GS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge � |
Fairchild Semiconductor |
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FDD10AN06A0-F085 | N-Channel Power MOSFET FDD10AN06A0-F085 N-Channel PowerTrench® MOSFET
FDD10AN06A0-F085
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
Features
• rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10 |
ON Semiconductor |
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FDD10AN06A0_F085 | MOSFET FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET
FDD10AN06A0_F085
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
Features
• rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10 |
Fairchild Semiconductor |
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