डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDC8886 | N-Channel MOSFET FDC8886 N-Channel Power Trench® MOSFET
April 2015
FDC8886
N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
Features
General Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) |
Fairchild Semiconductor |
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FDC8884 | N-Channel MOSFET | Fairchild Semiconductor |
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FDC8886 | N-Channel MOSFET | Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |