FDC86244 डाटा शीट PDF( Datasheet )

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 2.3 A, 144 mW FDC86244 General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates

FDC86244 N-Channel Power Trench® MOSFET November 2010 FDC86244 N-Channel Power Trench® MOSFET 150 V, 2.3 A, 144 mΩ Features „ Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A „ Max rDS(on) = 188 mΩ at VG