FDC8601 डाटा शीट PDF( Datasheet )

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 2.7 A, 109 mW FDC8601 General Description This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Ga

FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 109 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 109 mΩ at