डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDC8601 | N-Channel MOSFET MOSFET – N-Channel, Shielded Gate, POWERTRENCH)
100 V, 2.7 A, 109 mW
FDC8601
General Description This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that incorporates Shielded Ga |
ON Semiconductor |
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FDC8601 | N-Channel Shielded Gate PowerTrench MOSFET FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET
May 2013
FDC8601
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 2.7 A, 109 mΩ
Features
Shielded Gate MOSFET Technology Max rDS(on) = 109 mΩ at |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |