FDC638 डाटा शीट PDF( Datasheet )

FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET December 2006 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET –20V, –4.5A, 43mΩ Features „ Max rDS(on) = 43mΩ at VGS = –4.5V, ID =

MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -4.5 A, 43 mW FDC638APZ General Description This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has

June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been

MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -4.5 A, 48 mW FDC638P General Description This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has b