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FDC3535 | P-Channel MOSFET FDC3535 P-Channel Power Trench® MOSFET
FDC3535
P-Channel Power Trench® MOSFET
-80 V, -2.1 A, 183 mΩ
Features
General Description
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 233 |
ON Semiconductor |
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FDC3535 | P-Channel MOSFET FDC3535 P-Channel Power Trench® MOSFET
FDC3535
P-Channel Power Trench® MOSFET
-80 V, -2.1 A, 183 mΩ
June 2010
Features
General Description
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS |
Fairchild Semiconductor |
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