डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDB86563-F085 | N-Channel Power MOSFET FDB86563-F085 N-Channel PowerTrench® MOSFET
FDB86563-F085
N-Channel PowerTrench® MOSFET
60 V, 110 A, 1.8 mΩ
Features
Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 126 nC at VGS |
ON Semiconductor |
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FDB86563_F085 | MOSFET FDB86563_F085 N-Channel PowerTrench® MOSFET
FDB86563_F085
N-Channel PowerTrench® MOSFET
60 V, 110 A, 1.8 mΩ
December 2014
Features
Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |