डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDB3860 | N-Channel MOSFET FDB3860 N-Channel PowerTrench® MOSFET
March 2009
FDB3860
N-Channel PowerTrench® MOSFET
100 V, 30 A, 37 mΩ
Features
Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A High performance trench technology |
Fairchild Semiconductor |
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FDB3860 | N-Channel MOSFET | Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |