FDB3632 डाटा शीट PDF( Datasheet )

FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS =

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·Drain Source Voltage- : VDSS ≥100V ·Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3632(FDB3632) Features rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Qg(tot) = 84nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single

MOSFET – Power, N-Channel, POWERTRENCH) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 Features • RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (tot) = 84 nC (Typ.), VGS = 10 V • Low Miller Charge

FDB3632-F085 FDB3632-F085 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body