FDB120N10 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FDB120N10 FEATURES ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) @ VGS= 10V ·100% ava

FDB120N10 — N-Channel PowerTrench® MOSFET FDB120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ November 2013 Features • RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A • Fast Switching Speed