FDA59N25 डाटा शीट PDF( Datasheet )

FDA59N25 — N-Channel UniFETTM MOSFET FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features • RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 63 nC) • Low Crss (Typ.

isc N-Channel MOSFET Transistor FDA59N25 FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 49mΩ(Max) ·100% avalanche teste