FCX591 डाटा शीट PDF( Datasheet )

Production specification PNP Silicon Planar Medium Power High Perormance Transistor FCX591 FEATURES  Complementary type:FCX491. Pb Lead-free ORDERING INFORMATION Type No. Marking FCX591 P1 SOT-89 Pa

REPLACEMENT TYPE : FCX591 FEATURES  Power Dissipation HECX591(PNP) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO -80

Features • BVCEO > -60V • IC = -1A high Continuous Collector Current • ICM = -2A Peak Collector Current • RCE(SAT) = 295mΩ for a Low Equivalent On-Resistance • hFE characterized up to 2A for high cu

A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features • BVCEO > -40V • Maximum Continuous Current IC = -1A • Low saturation voltage VCE(sat) < -50

FCX591AQ 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features  BVCEO > -40V