डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FCPF16N60 | N-Channel MOSFET FCP16N60 / FCPF16N60 — N-Channel SuperFET® MOSFET
August 2014
FCP16N60 / FCPF16N60
N-Channel SuperFET® MOSFET
600 V, 16 A, 260 mΩ
Features
• 650V @ TJ = 150°C • Typ. RDS(on) = 220 mΩ • Ultra Low |
Fairchild Semiconductor |
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FCPF16N60 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FCPF16N60
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.26Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variation |
INCHANGE |
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FCPF16N60NT | 600V N-Channel MOSFET FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET
FCP16N60N / FCPF16N60NT
N-Channel SupreMOS® MOSFET
600 V, 16 A, 199 mΩ
November 2013
Features
• RDS(on) = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A � |
Fairchild Semiconductor |
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FCPF16N60NT | N-Channel MOSFET isc N-Channel MOSFET Transistor
FCPF16N60NT
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lo |
INCHANGE |
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