FCH170N60 डाटा शीट PDF( Datasheet )

FCH170N60 — N-Channel SuperFET® II MOSFET FCH170N60 N-Channel SuperFET® II MOSFET 600 V, 22 A, 170 m July 2014 Features • 650 V @TJ = 150°C • Typ. RDS(on) = 150 m • Ultra Low Gate Charge

isc N-Channel MOSFET Transistor FCH170N60 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 170mΩ@VGS=10V ·100% avalanche tested ·

MOSFET – N-Channel, SUPERFET II 600 V, 22 A, 170 mW FCH170N60 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balan