डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FCH130N60 | MOSFET FCH130N60 — N-Channel SuperFET® II MOSFET
July 2014
FCH130N60
N-Channel SuperFET® II MOSFET
600 V, 28 A, 130 m
Features
• 650 V @ TJ = 150°C • Typ. RDS(on) = 112 m • Ultra Low Gate Charge (T |
Fairchild Semiconductor |
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FCH130N60 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FCH130N60
·FEATURES ·With TO-247 packaging ·Drain Source Voltage-
: VDSS ≥ 600V ·Static drain-source on-resistance:
RDS(on) ≤ 130mΩ@VGS=10V ·100% avalanche tested · |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |