डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FCH104N60 | N-Channel MOSFET FCH104N60 — N-Channel SuperFET® II MOSFET
FCH104N60
N-Channel SuperFET® II MOSFET
600 V, 37 A, 104 mΩ
June 2014
Features
• 650 V @ TJ = 150°C • Typ. RDS(on) = 96 mΩ • Ultra Low Gate Charge (Typ. |
Fairchild Semiconductor |
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FCH104N60 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FCH104N60
·FEATURES ·With TO-247 packaging ·Drain Source Voltage-
: VDSS ≥ 600V ·Static drain-source on-resistance:
RDS(on) ≤ 104mΩ@VGS=10V ·100% avalanche tested · |
INCHANGE |
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FCH104N60F | MOSFET FCH104N60F — N-Channel SuperFET® II FRFET® MOSFET
FCH104N60F
N-Channel SuperFET® II FRFET® MOSFET
600 V, 37 A, 104 mΩ
December 2014
Features
• 650 V @ TJ = 150°C • Typ. RDS(on) = 98 mΩ • Ultra |
Fairchild Semiconductor |
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FCH104N60F-F085 | N-Channel MOSFET FCH104N60F-F085 N-Channel SuperFET, 600V, 37A, 104mohm
FCH104N60F-F085
N-Channel SuperFET II FRFET MOSFET
600 V, 37 A, 104 mΩ
Features
Typical RDS(on) = 91 mΩ at VGS = 10 V, ID = 18.5 A Typical Qg(tot |
ON Semiconductor |
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