FCH043N60 डाटा शीट PDF( Datasheet )

FCH043N60 — N-Channel SuperFET® II MOSFET April 2014 FCH043N60 N-Channel SuperFET® II MOSFET 600 V, 75 A, 43 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 37 mΩ • Ultra Low Gate Charge (Typ.

isc N-Channel MOSFET Transistor FCH043N60 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 43mΩ@VGS=10V ·100% avalanche tested ·M

MOSFET – N-Channel, SUPERFET) II 600 V, 75 A, 43 mW FCH043N60 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balan