F2N60 डाटा शीट PDF( Datasheet )

2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conductio

PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • F

UNISONIC TECHNOLOGIES CO., LTD F2N60 2.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, hig

F2N60 N-沟道功率 MOS 管/N-CHANNEL POWER MOSFET ◆应用:电子镇流器 电子变压器 开关电源 ◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power Supply ◆特点:热阻