F1060 डाटा शीट PDF( Datasheet )

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadca

Production specification Schottky Barrier Rectifiers FEATURES z STSD F1030CT---STSD F1060CT Metal-Semiconductor Junction with Guard Ring. z Epit axial Construction. z Pb Lead-free Low Forward Voltage Drop