EPC2016 डाटा शीट PDF( Datasheet )

eGaN® FET DATASHEET EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 16 mW ID , 11 A NEW PRODUCT EPC2016 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and p

eGaN® FET DATASHEET EPC2016C – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 16 mΩ ID , 18 A D G S EPC2016C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobi