EPC2015 डाटा शीट PDF( Datasheet )

eGaN® FET DATASHEET EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS(ON) , 4 mW ID , 33 A NEW PRODUCT EPC2015 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and pro

eGaN® FET DATASHEET EPC2015C – Enhancement Mode Power Transistor VDS , 40 V RDS(on) , 4 mΩ ID , 53 A D G S EPC2015C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobili