डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
EPC2010 | Power Transistor eGaN® FET DATASHEET
EPC2010 – Enhancement Mode Power Transistor
VDSS , 200 V RDS(ON) , 25 mW ID , 12 A
NEW PRODUCT
EPC2010
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and p |
EPC |
|
EPC2010C | Power Transistor eGaN® FET DATASHEET
EPC2010C
EPC2010C – Enhancement Mode Power Transistor
VDS , 200 V RDS(on) , 25 mΩ ID , 22 A
D G
S
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mob |
EPC |
www.DataSheet.in | 2017 | संपर्क |