डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
EPC2001 | Power Transistor eGaN® FET DATASHEET
EPC2001 – Enhancement Mode Power Transistor
VDSS , 100 V RDS(ON) , 7 mW ID , 25 A
NEW PRODUCT
EPC2001
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and pr |
EPC |
|
EPC2001C | Power Transistor eGaN® FET DATASHEET
EPC2001C – Enhancement Mode Power Transistor
VDS , 100 V RDS(on) , 7 mΩ ID , 36 A
D G
S
EPC2001C
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobil |
EPC |
www.DataSheet.in | 2017 | संपर्क |