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EMD10N06A DataSheet

No. Partie # Fabricant Description Fiche Technique
1
EMD10N06A

Excelliance MOS
N-Channel Logic Level Enhancement Mode Field Effect Transistor
age limited. UNIT V A mJ W °C UNIT °C / W 2014/8/15 p.1 EMD10N06A ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshol
Datasheet



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