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EMB60 | Complex Digital Transistors EMB60
Complex Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
l Outline
Parameter VCC IC(MAX.) R1 R2
DTr1 and DTr2 -50V -100mA 2.2kΩ 47kΩ
EMT6
EMB60 (SC-107C)
|
ROHM |
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EMB60A06G | MOSFET
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
60mΩ
ID 5A
UIS, Rg 100% Tested
Pb‐Free Lead Pl |
Excelliance MOS |
|
EMB60A06S | MOSFET
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
60mΩ
ID 5A
UIS, 100% Tested
Pb‐Free Lead Platin |
Excelliance MOS |
|
EMB60A06V | MOSFET
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
60mΩ
ID 6A
UIS, Rg 100% Tested
Pb‐Free Lead Pl |
Excelliance MOS |
|
EMB60B03G | MOSFET
Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
60mΩ
ID ‐5A
Pb‐Free Lead Plating & Haloge |
Excelliance MOS |
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EMB60C06G | MOSFET
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS RDSON (MAX.)
60V ‐60V 60mΩ 90mΩ
ID 5A ‐4A
|
Excelliance MOS |
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EMB60N06A | MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
60mΩ
ID 12A G
UIS, Rg 100% Tested
S
Pb‐Free Lead |
Excelliance MOS |
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