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EMB3 | PNP Digital Transistors EMB3 / UMB3N / IMB3A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Parameter
VCEO IC(MAX.)
R1
Tr1 and Tr2
-50V -100mA
4.7kW
lFeatures
1) Built-In Biasing Resistor |
Rohm |
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EMB3 | Dual Digital Transistors JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
EMB3 Dual Digital Transistors (PNP+PNP)
FEATURES z Two DTA143T chips in a package z Transistor elements are ind |
JCET |
|
EMB30B03V | MOSFET
Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
35mΩ
ID ‐6.5A
Pb‐Free Lead Plating & Halo |
Excelliance MOS |
|
EMB30P03A | MOSFET
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
30mΩ
ID
‐22A
G
UIS, Rg 100% Tested
S
Pb‐Free |
Excelliance MOS |
|
EMB30P03VAT | MOSFET
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
30mΩ
ID ‐8A G
S
Pb‐Free Lead Plating & Halogen |
Excelliance MOS |
|
EMB32A03G | MOSFET
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
32mΩ
ID 6.5A
Pb‐Free Lead Plating & Halogen |
Excelliance MOS |
|
EMB32A03VA | MOSFET
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
35mΩ
ID 5.5A
Pb‐Free Lead Plating & Halogen |
Excelliance MOS |
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