डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
EKG1020 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage-
: VDSS=100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 52mΩ(Max) ·100% avalanche tested ·Minimu |
INCHANGE |
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EKG1020 | Power MOSFET 100V, 20A Low RDS(ON) N ch Trench Power MOSFET
EKG1020, FKG1020
Data Sheet
Features
● VDS ------------------------------------------------------ 100 V ● ID ------------------------------------------------ |
Sanken |
www.DataSheet.in | 2017 | संपर्क |