डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
EC2612 | 40GHz Super Low Noise PHEMT EC2612
40GHz Super Low Noise PHEMT
Pseudomorphic High Electron Mobility Transistor Description
The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. G |
United Monolithic Semiconductors |
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EC2612 | 40GHz Super Low Noise PHEMT | United Monolithic Semiconductors |
www.DataSheet.in | 2017 | संपर्क |