डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
E4D20120D | Silicon Carbide Power MOSFET E4D20120D
1200 V, 20 A Silicon Carbide Schottky Diode
Features
• 4th generation SiC merged PIN schottky technology • Zero reverse recovery current • High-frequency operation • Temperature-independent |
Wolfspeed |
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E4D20120A | Silicon Carbide Schottky Diode | CREE |
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E4D20120D | Silicon Carbide Power MOSFET | Wolfspeed |
www.DataSheet.in | 2017 | संपर्क |