DU2880 डाटा शीट PDF( Datasheet )

an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figu

an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figu

an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figu

DU2880T RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V Features  N- channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power 

RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competit

DU2880U RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power 

an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lowe