डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DP3 | Connector Interface |
JAE |
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DP302 | Silicon Beam-Lead Schottky Barrier Detector Diodes www.DataSheet4U.com
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Temex |
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DP3090 | N-Channel MOSFET DP3090
Trench N-MOSFET 30V, 3.2mΩ, 90A
Features • Uses advanced Trench MOS technology • Extremely low on-resistance RDS(on) RDS(on) typ. • Excellent QgxRDS(on) product(FOM) • Qualified according to J |
Developer Microelectronics |
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DP30D600T*1016xx | E2 IGBT E2 IGBT Modules
Technical specifications
• Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom design • Flexible pin configuration, max. |
Danfoss Silicon Power GmbH |
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DP30E600T*1016xx | E2 IGBT E2 IGBT Modules
Technical specifications
• Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom design • Flexible pin configuration, max. |
Danfoss Silicon Power GmbH |
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DP30F600T101626 | E2 IGBT E2 IGBT Modules
Technical specifications
• Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom design • Flexible pin configuration, max. |
Danfoss Silicon Power GmbH |
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DP30H600T101619 | E2 IGBT E2 IGBT Modules
Technical specifications
• Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom design • Flexible pin configuration, max. |
Danfoss Silicon Power GmbH |
www.DataSheet.in | 2017 | संपर्क |