DMTH6004SCT डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DMTH6004SCT FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.65mΩ(Max) ·100% avalanch

DMTH6004SCT 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 3.65mΩ @ VGS = 10V ID TC = +25°C (Note 9) 100A Description and Applications This new generation MOSFET feat

isc N-Channel MOSFET Transistor DMTH6004SCTB FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.4mΩ(Max) ·100% avalanch

NEW PRODUCT Green DMTH6004SCTB 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 3.4mΩ @ VGS = 10V ID TC = +25°C (Note 9) 100A Description This new generation MOSFET fe

NEW PRODUCT Green DMTH6004SCTBQ 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) Max 60V 3.4mΩ @ VGS = 10V ID TC = +25°C (Silicon Limited) 163A ID TC = +25°C (Pa