DMT6009LCT डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 37.2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) ·100% avalanche tested ·Min

DMT6009LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 12mΩ @VGS = 10V 14.5mΩ @VGS = 4.5V ID TC = +25°C 37.2A 33.9A Features  Excellent QGD X RDS(ON) Product (FOM)