DMT6004SCT डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DMT6004SCT FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.65mΩ(Max) ·100% avalanche

Product Summary BVDSS 60V RDS(ON) max 3.65mΩ @ VGS = 10V ID TC = +25°C (Note 9) 100A DMT6004SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features  100% Unclamped Inductive Switching (UIS) Test in Producti