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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DMN2310UT | N-CHANNEL MOSFET DMN2310UT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(ON)
240mΩ @ VGS = 4.5V 300mΩ @ VGS = 2.5V
ID TA = +25°C
1.2A 1.04A
Description and Applications
This new generation MOSFET is |
DIODES |
|
DMN2310UTQ | N-CHANNEL MOSFET Product Summary
BVDSS 20V
RDS(on)
240mΩ @ VGS = 4.5V 300mΩ @ VGS = 2.5V
ID TA = +25°C
1.2A 1.04A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance |
DIODES |
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