DKI06261 डाटा शीट PDF( Datasheet )

60 V, 25 A, 16.7 mΩ Low RDS(ON) N ch Trench Power MOSFET DKI06261 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ----------------------------------------------------------

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 21.9mΩ(Max) ·100% avalanche tested ·Minim