डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DE275-101N30A | RF Power MOSFET DE275-101N30A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; |
IXYS Corporation |
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DE275-101N30A | RF Power MOSFET | IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |