| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange |
Silicon Power Transistor ACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC |
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Won-Top Electronics |
20A 8.4mm/9.5mm DISH DIODE |
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Won-Top Electronics |
20A 8.4mm/9.5mm DISH DIODE |
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Central Semiconductor Corp |
SUPERmini. SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ise noted) MIN 300 100 100 1.0 5.0 50 MAX UNIT V nA µA V pF ns IF=IR=30mA, Rec. To 3.0mA, RL=100Ω R1 ( 7-August 2001) Central TM CMDD2004 SUPERmini™ SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE Semiconductor Corp. SOD-323 CASE - MECHANICAL OUTLI |
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SanRex |
MODULE DIODE rature Isolation Breakdown Voltage R.M.S. Mounting Torque Mounting M6 Terminal M6 Mass Conditions Single phase, half wave, 180 conduction, Tc=106 Single phase, half wave, 180 conduction, Tc=106 1cycle, 50/60HZ, peak value, non-repetitive Value f |
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SanRex |
MODULE DIODE rature Isolation Breakdown Voltage R.M.S. Mounting Torque Mounting M6 Terminal M6 Mass Conditions Single phase, half wave, 180 conduction, Tc=106 Single phase, half wave, 180 conduction, Tc=106 1cycle, 50/60HZ, peak value, non-repetitive Value f |
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SanRex |
MODULE DIODE rature Isolation Breakdown Voltage R.M.S. Mounting Torque Mounting M6 Terminal M6 Mass Conditions Single phase, half wave, 180 conduction, Tc=106 Single phase, half wave, 180 conduction, Tc=106 1cycle, 50/60HZ, peak value, non-repetitive Value f |
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SanRex |
MODULE DIODE rature Isolation Breakdown Voltage R.M.S. Mounting Torque Mounting M6 Terminal M6 Mass Conditions Single phase, half wave, 180 conduction, Tc=106 Single phase, half wave, 180 conduction, Tc=106 1cycle, 50/60HZ, peak value, non-repetitive Value f |
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SanRex |
MODULE DIODE titve 50/60Hz ½ Value for one cycle of surge current A.C. 1minute A.C. Recommended Value 2.5 3.9 25 40 Recommended Value 2.5 3.9 25 40 Typical value Unit mm Tj 25 Unit V V Ratings 200 310 5000/5500 125000 40 150 40 125 Unit A A A A2s 2500 V 4. |
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Central Technologies |
DC/DC Converters Efficiency: To 82% Temperature Range: -40°C to 85°C Isolation: 1KVDC Power Density: 1.42W/cm3 Package: UL94-V0 Miscellaneous: No heatsink required. No external component required. Industry standard pinout. Positive & Negative Voltage Output. Full 2W |
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IXYS |
Standard Rectifier / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For single and three phase bridge c |
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IXYS |
Standard Rectifier / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For single and three phase bridge c |
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SanRex |
MODULE DIODE rature Isolation Breakdown Voltage R.M.S. Mounting Torque Mounting M6 Terminal M6 Mass Conditions Single phase, half wave, 180 conduction, Tc=106 Single phase, half wave, 180 conduction, Tc=106 1cycle, 50/60HZ, peak value, non-repetitive Value f |
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IXYS |
Standard Rectifier / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For single and three phase bridge c |
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IXYS |
Standard Rectifier / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For single and three phase bridge c |
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Infineon |
IGBT gerungsladung Recoveredcharge IF = 200 A, - diF/dt = 1100 A/µs (Tvj=125°C) Tvj = 25°C VR = 1800 V Tvj = 125°C VGE = -15 V AbschaltenergieproPuls Reverserecoveryenergy IF = 200 A, - diF/dt = 1100 A/µs (Tvj=125°C) Tvj = 25°C VR = 1800 V Tv |
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INCHANGE |
NPN Transistor ：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD200D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sust |
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