डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
D357 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD357
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2 |
INCHANGE |
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D353M3D | (D359M3D / D353M3D) 3.5 Compact Floppy Disk Drive | Mitsumi |
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D358 | 2SD358 | ETC |
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D357 | Silicon NPN Power Transistor | INCHANGE |
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D359M3D | (D359M3D / D353M3D) 3.5 Compact Floppy Disk Drive | Mitsumi |
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D35SB100 | High Current Glass Passivated Molding Single-Phase Bridge Rectifier | LRC |
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D35SB80 | High Current Glass Passivated Molding Single-Phase Bridge Rectifier | LRC |
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D35SB60 | High Current Glass Passivated Molding Single-Phase Bridge Rectifier | LRC |
|
D35H74D | UPD35H74D | NEC |
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D3501N | GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER | PST |
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D35SB20 | High Current Glass Passivated Molding Single-Phase Bridge Rectifier | LRC |
www.DataSheet.in | 2017 | संपर्क |