D291S डाटा शीट PDF( Datasheet )

European PowerSemiconductor and Electronics Company Marketing Information D 291 S ø3,5+0, deepth = 4±0,2 on both C A Applikation: Beschaltungsdiode zu GTO - Vorrichtungen Application: Snubberdiode at GTO

D291S45T Fast Recovery Diode FEATURES ·Full diffusion process,flat type ceramic tube package ·Double sides cooling,High current ·Minimum Lot-to-Lot variations for robust device performance and reliable oper