| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi |
Silicon NPN Triple Diffused • High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) • Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collec |
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Hitachi |
Silicon NPN Transistor • High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) • Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collec |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unles |
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INCHANGE |
Silicon NPN Darlington Power Transistor 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA, IE= 0 120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA, IC= 0 7 V VCE(sat)-1 Collector-Emitter Satu |
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