D2016 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| D2016 | 2SD2016 www.DataSheet4U.com
Darlington
2SD2016
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=1.5mA IC=1A, IB=1.5mA VCE=1 |
 Allegro |
|
| D2012 | Si NPN Transistor |  Wuxi Youda Electronics |
|
| D2012 | 2SD2012 |  Toshiba Semiconductor |
|
| D2011UK | METAL GATE RF SILICON FET |  Seme LAB |
|
| D2017M | FTD2017M |  Sanyo Semicon Device |
|
| D2012UK | METAL GATE RF SILICON FET | Seme LAB |
|
| D2016 | 2SD2016 | Allegro |
|
| D2010UK | METAL GATE RF SILICON FET | Seme LAB |
|
| D2015UK | METAL GATE RF SILICON FET | Seme LAB |
|
| D2012 | NPN Silicon Power Transistor |  STMicroelectronics |
|
| D2017UK | METAL GATE RF SILICON FET | Seme LAB |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |