| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
2SD1716 |
|
|
|
|
Inchange Semiconductor |
Power Transistor aturation Voltage IC= 8A; IB= 0.8A VBE(on) Base -Emitter On Voltage IC= 8A; VCE= 5V ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain |
|
|
|
|
Supertex |
Ultrasound Driver IC ► ► Advanced CMOS technology ► ► 4.5 to 12.5V power supply voltage ► ► 2.0A output source and sink current ► ► 6.5ns rise and fall time with 1.0nF load ► ► 10ns propagation delay ► ► ±2ns matched delay times ► ► 12 matched channels ► ► 1.8 to 3.3V CMOS logic |
|
|
|
|
Samsung |
16M Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod |
|
|
|
|
Samsung |
16M Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod |
|
|
|
|
Samsung |
16M Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod |
|
|
|
|
Samsung semiconductor |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod |
|
|
|
|
Samsung semiconductor |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod |
|
|
|
|
Samsung Electronics |
16M-Bit Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod |
|
|
|
|
Samsung Electronics |
16M-Bit Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod |
|