| No. | Partie # | Fabricant | Description | Fiche Technique |
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Cypress Semiconductor |
512-Kbit (32 K x 16) Static RAM ■ Pin- and function-compatible with CY7C1020B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low complementary metal oxide semiconductor (CMOS) standby power ❐ ISB2 = 3 mA ■ 2.0 V data retention ■ Automatic power-down when dese |
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Cypress Semiconductor |
32K x 16 Static RAM • 3.3V operation (3.0V - 3.6V) • High speed — tAA = 10 ns • Low active power — 540 mW (max., 12 ns) • Very Low standby power — 330 µW (max., “L” version) • Automatic power-down when deselected • Independent Control of Upper and Lower bytes • Availabl |
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Cypress Semiconductor |
512 K (32 K x 16) Static RAM ■ Pin- and function-compatible with CY7C1020CV33 ■ Temperature Ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive: –40 °C to 125 °C ■ High speed ❐ tAA = 10 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 325 mW (max) |
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Cypress Semiconductor |
32K x 16 Static RAM • 5.0V operation (± 10%) • High speed — tAA = 10 ns • Low active power — 825 mW (max., 10 ns, “L” version) • Very Low standby power — 550 µW (max., “L” version) • Automatic power-down when deselected • Independent Control of Upper and Lower bytes • A |
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Cypress Semiconductor |
512-Kbit (32 K x 16) Static RAM ■ Temperature range ❐ Automotive: –40 °C to 125 °C ■ High speed ❐ tAA = 15 ns ■ Optimized voltage range: 2.5 V to 2.7 V ■ Automatic power down when deselected ■ Independent control of upper and lower bits ■ CMOS for optimum speed and power ■ Package |
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Cypress Semiconductor |
512 K (32 K x 16) Static RAM ■ Pin-and function-compatible with CY7C1020CV33 ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA ■ 2.0 V Data retention ■ Automatic power-down when deselected ■ CMOS for optimum speed/power ■ |
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