डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CTH3506NS-T52 | N-Channel MOSFET CTH3506NS-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 60V Drain-Source On-Resistance
RDS(ON) 17m, at VGS= 10V, ID= 30A
Continuous Drain Current at TC=25℃ID =3 |
CT Micro |
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CTH3506NS-T52 | N-Channel MOSFET | CT Micro |
www.DataSheet.in | 2017 | संपर्क |