| No. | Partie # | Fabricant | Description | Fiche Technique |
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CT Micro |
N-Channel MOSFET Drain-Source Breakdown Voltage VDSS 30V Drain-Source On-Resistance RDS(ON) 21m, at VGS= 10V, ID= 10A RDS(ON) 32m, at VGS= 4.5V, ID= 7A Continuous Drain Current at TC=25℃, ID =25A Advanced high cell density Trench Technology RoHS Complianc |
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