CT60AM-18F डाटा शीट PDF( Datasheet )

MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 φ3.2 6 1 2 1 Œ  Ž 0.5 3 5.45 5.45 q VCES ..............................

CT60AM-18F Insulated Gate Bipolar Transistor Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL) 4 1 12 3 REJ0