डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CT2N7002E-R3 | N-Channel MOSFET CT2N7002E-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resistance
RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA
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CT Micro |
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CT2N7002E-R3 | N-Channel MOSFET | CT Micro |
www.DataSheet.in | 2017 | संपर्क |