डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CS6N60 | VDMOS 华晶分立器件
CS6N60(F)
CS6N60(F)型 VDMOS 晶体管
1.概述与特点
CS6N60(F)是 N 沟道 600V 系列 VDMOS 晶体管, 主要用于电源适配器、 充电器等各种功率开关 电路。 具有 |
ETC |
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CS6N60A3D | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60 A3D
○R
General Description:
CS6N60 A3D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction los |
Huajing Microelectronics |
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CS6N60A3HDY | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60 A3HDY
○R
General Description:
CS6N60 A3HDY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction |
Huajing Microelectronics |
|
CS6N60A3TY | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60 A3TY
○R
General Description:
CS6N60 A3TY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction l |
Huajing Microelectronics |
|
CS6N60A4D | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60 A4D
○R
General Description:
CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, |
Huajing Microelectronics |
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CS6N60A4H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60 A4H
○R
General Description:
CS6N60 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, |
Huajing Microelectronics |
|
CS6N60A4TY | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS6N60 A4TY
○R
General Description:
CS6N60 A4TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss |
Huajing Microelectronics |
www.DataSheet.in | 2017 | संपर्क |